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| inchange semiconductor isc product specification isc website www.iscsemi.cn isc silicon npn power transistor BD232 description good linearity of h fe high collector-emitter breakdown voltage- : v (br)ceo = 300v(min) applications designed for use in power output stages and line driver in tv receivers. absolute maximum ratings(t a =25 ) symbol parameter value unit v ces collector-emitter v oltage 500 v v ceo collector-emitter v oltage 300 v v ebo emitter-base voltage 5.0 v i c collector current-continuous 0.5 a i b base current-continuous 0.25 a p c collector power dissipation @t c =25 20 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 6.25 /w
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistor BD232 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 10ma; i b = 0 300 v v ce( sat ) collector-emitter saturation voltage i c = 150ma; i b = 15ma 1.0 v i ces collector cutoff current v ce = 500v; v be = 0 100 a i ebo emitter cutoff current v eb = 5v; i c = 0 10 a h fe-1 dc current cain i c = 50ma ; v ce = 5v 25 150 h fe-2 dc current cain i c = 150ma ; v ce = 5v 20 |
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